SKM300GAR12E4 ? by semikron rev. 1 ? 21.08.2013 1 semitrans ? 3 gar igbt4 modules SKM300GAR12E4 features ? igbt4 = 4. generation medium fast trench igbt (infineon) ? cal4 = soft switching 4. generation cal-diode ? isolated copper baseplate using dbc technology (direct bonded copper) ? increased power cycling capability ? with integrated gate resistor ? for higher switching frequenzies up to 12khz ? ul recognized, file no. e63532 typical applications* ?dc/dc ? converter ? brake chopper ? switched reluctance motor remarks ? case temperature limited to t c = 125c max. ? recommended t op = -40 ... +150c ? product reliability results valid for t j = 150c absolute maximum ratings symbol conditions values unit igbt v ces t j =25c 1200 v i c t j = 175 c t c =25c 422 a t c =80c 324 a i cnom 300 a i crm i crm = 3xi cnom 900 a v ges -20 ... 20 v t psc v cc = 800 v v ge 15 v v ces 1200 v t j =150c 10 s t j -40 ... 175 c inverse diode i f t j = 175 c t c =25c 353 a t c =80c 264 a i fnom 300 a i frm i frm = 3xi fnom 900 a i fsm t p = 10 ms, sin 180, t j =25c 1548 a t j -40 ... 175 c freewheeling diode i f t j = 175 c t c =25c 353 a t c =80c 264 a i fnom 300 a i frm i frm = 3xi fnom 900 a i fsm t p = 10 ms, sin 180, t j =25c 1548 a t j -40 ... 175 c module i t(rms) t terminal =80c 500 a t stg -40 ... 125 c v isol ac sinus 50 hz, t = 1 min 4000 v characteristics symbol conditions min. typ. max. unit igbt v ce(sat) i c =300a v ge =15v chiplevel t j =25c 1.85 2.10 v t j =150c 2.25 2.45 v v ce0 chiplevel t j =25c 0.8 0.9 v t j =150c 0.7 0.8 v r ce v ge =15v chiplevel t j =25c 3.50 4.00 m ? t j =150c 5.17 5.50 m ? v ge(th) v ge =v ce , i c =12ma 5 5.8 6.5 v i ces v ge =0v v ce = 1200 v t j =25c 4.0 ma t j =150c ma c ies v ce =25v v ge =0v f=1mhz 17.6 nf c oes f=1mhz 1.16 nf c res f=1mhz 0.94 nf q g v ge = - 8 v...+ 15 v 1700 nc r gint t j =25c 2.5 ?
SKM300GAR12E4 2 rev. 1 ? 21.08.2013 ? by semikron t d(on) v cc = 600 v i c =300a v ge =15v r g on =1.5 ? r g off =1.5 ? di/dt on = 6100 a/s di/dt off =3000a/s t j =150c 220 ns t r t j =150c 44 ns e on t j =150c 27 mj t d(off) t j =150c 520 ns t f t j =150c 117 ns e off t j =150c 39 mj r th(j-c) per igbt 0.11 k/w inverse diode v f = v ec i f = 300 a v ge =0v chiplevel t j =25c 2.17 2.49 v t j =150c 2.11 2.42 v v f0 chiplevel t j =25c 1.3 1.5 v t j =150c 0.9 1.1 v r f chiplevel t j =25c 2.9 3.3 m ? t j =150c 4.0 4.4 m ? i rrm i f = 300 a di/dt off =7300a/s v ge =15v v cc = 600 v t j =150c 345 a q rr t j =150c 54 c e rr t j =150c 23 mj r th(j-c) per diode 0.17 k/w freewheeling diode v f = v ec i f = 300 a v ge =0v chiplevel t j =25c 2.17 2.49 v t j =150c 2.11 2.42 v v f0 chiplevel t j =25c 1.3 1.5 v t j =150c 0.9 1.1 v r f chiplevel t j =25c 2.9 3.3 m ? t j =150c 4.0 4.4 m ? i rrm i f = 300 a di/dt off =7300a/s v ge =15v v cc = 600 v t j =150c 345 a q rr t j =150c 54 c e rr t j =150c 23 mj r th(j-c) per diode 0.17 k/w module l ce 15 20 nh r cc'+ee' terminal-chip t c =25c 0.25 m ? t c =125c 0.5 m ? r th(c-s) per module 0.02 0.038 k/w m s to heat sink m6 3 5 nm m t to terminals m6 2.5 5 nm nm w 325 g characteristics symbol conditions min. typ. max. unit semitrans ? 3 gar igbt4 modules SKM300GAR12E4 features ? igbt4 = 4. generation medium fast trench igbt (infineon) ? cal4 = soft switching 4. generation cal-diode ? isolated copper baseplate using dbc technology (direct bonded copper) ? increased power cycling capability ? with integrated gate resistor ? for higher switching frequenzies up to 12khz ? ul recognized, file no. e63532 typical applications* ?dc/dc ? converter ? brake chopper ? switched reluctance motor remarks ? case temperature limited to t c = 125c max. ? recommended t op = -40 ... +150c ? product reliability results valid for t j = 150c
SKM300GAR12E4 ? by semikron rev. 1 ? 21.08.2013 3 fig. 1: typ. output characteristic, inclusive r cc'+ ee' fig. 2: rated current vs. temperature i c = f (t c ) fig. 3: typ. turn-on /-off energy = f (i c ) fig. 4: typ. turn-on /-off energy = f (r g ) fig. 5: typ. transfer characteristic fig. 6: typ. gate charge characteristic
SKM300GAR12E4 4 rev. 1 ? 21.08.2013 ? by semikron fig. 7: typ. switching times vs. i c fig. 8: typ. switching ti mes vs. gate resistor r g fig. 9: transient thermal impedance fig. 10: typ. cal diode forward charact., incl. r cc'+ ee' fig. 11: cal diode peak reverse recovery current fig. 12: typ. cal diode peak reverse recovery charge
SKM300GAR12E4 ? by semikron rev. 1 ? 21.08.2013 5 this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix * the specifications of our components may no t be considered as an assurance of component characteristics. components have to b e tested for the respective application. adjustments may be necessary. the use of semikron produc ts in life support appliances and syste ms is subject to prior specification and written approval by semikron. we therefore strongly recommend prior consultation of our staf f. semitrans 3 gar
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